基于正交试验的单晶硅靶材制备氮化硅薄膜沉积参数的优化
2018-07-13
作者：马辰卉，武文革，伏宁娜，王昕宇，成云平，刘丽娟
单位：中北大学
摘要：基于单晶硅靶材制备氮化硅薄膜的沉积参数正交试验，通过选择和研究溅射功率、工作压强、气体流量比和基底温度这四个因素，得到这四个因素对薄膜沉积速率和薄膜表面粗糙度的影响规律；利用从正交试验中得到的一系列观测值分别建立关于薄膜沉积速率和薄膜表面粗糙度与四个沉积参数之间相互影响变化的两个经验模型公式；为得到较好的沉积效果，对所得到的经验公式进行分析，得到最佳沉积参数。
关键词：氮化硅薄膜；沉积参数；正交试验；参数优化
中图分类号：TG174.4；TH145；TP212文献标志码：A
Study on Optimization of Deposition Parameters of Silicon Nitride Thin Films Prepared by Monocrystalline Silicon Target Based on Orthogonal Test
Ma Chenhui，Wu Wenge，Fu Ningna，Wang Xinyu，Cheng Yunping，Liu Lijuan
Abstract:The deposition parameters orthogonal experiment of silicon nitride thin films prepared by monocrystalline silicon target material are designed.Four parameters，such as sputtering power，perating pressure，gas flow ratio and substrate temperature，are used to as the factors of orthogonal experiment.The influencing degree and significance of the results for the film deposition rate and film surface roughness of every factor are analyzed.Two empirical models are established respectively for the relationship between deposition rates，film roughness and deposition parameters by the resulted of the orthogonal experiment. In order to get a better effect on deposition，the best deposition parameters are obtained by the analysis of empirical formula.
Keywords:silicon nitride film；deposition parameter；orthogonal experiment；parameter optimization