抛光垫特性对氧化镓CMP影响的实验研究
2018-07-16
作者：龚凯1，周海2，韦嘉辉1，宋放3，王晨宇4
单位：1江苏大学；2盐城工学院；3安徽理工大学；4江苏吉星新材料有限公司
摘要：对比分析了不同抛光垫的表面形貌、表面粗糙度、硬度以及涵养量对氧化镓晶片化学机械抛光过程中表面质量和材料去除率的影响规律，结果表明：在同一抛光参数条件下，Suba600无纺布抛光垫的材料去除率最大，为30.8nm/min，但抛光后氧化镓表面有明显的凹坑；Politex阻尼布、LP57聚氨酯抛光垫抛光后晶片表面形貌都较好，获得了镜面无损伤晶片表面，但LP57聚氨酯抛光垫的材料去除率为22.6nm/min，大于Politex阻尼布抛光垫16.4nm/min的材料去除率；LP57聚氨酯抛光垫更适合对单晶氧化镓晶片进行化学机械抛光。该研究为氧化镓化学机械抛光（CMP）提供了参考依据。
关键词：抛光垫特性；单晶氧化镓；化学机械抛光；材料去除率；表面质量
中图分类号：TG175；TH117.1文献标志码：A
Experimental Study on Influence of Polishing Pad Characteristics on Gallium Oxide CMP
Gong Kai，Zhou Hai，Wei Jiahui，Song Fang，Wang Chenyu
Abstract:The effects of surface appearance，surface roughness，hardness，the amount of soil on the surface quality and material removal rate of the gallium oxide wafer during chemical mechanical polishing are compared and analyzed in this experiment.The results show that：under the same polishing parameters，the material removal rate of the Suba600 polishing pad is the largest ，which is 30.8nm/min，but after polishing，the surface of gallium oxide has obvious pits；after polishing the surface morphology，Politex and LP57 polishing pad is better，which achieves the mirror without damage wafer surface，but LP57 polishing pad material removal rate is greater（22.6nm/min）than Politex polishing pad with the material removal rate of 16.4nm/min.So LP57 polishing pad is more suitable for gallium oxide wafer chemical mechanical polishing.At the same time，it provides a reference basis for the gallium oxide CMP.
Keywords:polishing pad characteristics；monocrystalline gallium oxide；CMP；MRR；surface quality