粗糙界面下不同刻划深度对单晶铜纳米刻划的影响
2020-10-23
作者：陈华，黄健萌
单位：福州大学机械工程及自动化学院
摘要：通过分子动力学模拟方法对粗糙表面单晶铜基体进行了纳米刻划实验。分析了不同刻划深度下的基体材料变形及缺陷分布情况以及刻划过程中摩擦力、正应力的变化。结果表明，随着刻划深度的增大，得到的平均摩擦力和初始正应力极值均随之增大，同时基体材料变形加剧，基体内部各类材料缺陷增多，产生了更多的失效原子。基体应力-位移曲线在刻划过程中呈周期性变化，每次循环所得到的应力极值随着刻划位移不断递减。
关键词：分子动力学模拟；粗糙表面；刻划；摩擦力；缺陷；正应力
中图分类号：TG146.11；TH161文献标志码：ADOI：10.3969/j.issn.1000-7008.2020.07.016
Effect of Different Scratching Depths on Nanoscale Scratch on Single Crystal Copper
with Rough Surface
Chen Hua，Huang Jianmeng
Abstract:Nanoscale scratching experiment is performed on single crystal copper substrate with rough surface by molecular dynamics simulation.The deformation and defects distribution of the substrate material，as well as the changes in friction and normal stress during the scratch process at different scratching depths are analyzed.The results show that the initial normal stress extremum value and the average friction force increase，the deformation of the substrate material and various material defects also increase，and more failure atoms are generated in the substrate with the increase of the scratching depth.It is found that the stressdisplacement curve of the substrate present a periodicity corresponding during the scratching process，and the stress extreme value obtained by each cycle continuously decreases with the increase of the scratching displacement.
Keywords:molecular dynamics simulation；rough surface；scratching；friction force；material defect；normal stress